Capacitively induced high mobility two-dimensional electron gas in undoped Si Si1-x Gex heterostructures with atomic-layer-deposited dielectric

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Lu, T M ^a   Liu, J ^b   Kim, J ^b   Lai, K ^a,c   Tsui, D C ^a   Xie, Y H ^b  

^a Princeton University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON PHYSICS; QUANTUM HALL STATES;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; METAL INSULATOR TRANSITION; SEMICONDUCTING SILICON;

ELECTRON GAS;

EID: 34248168267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736273     Document Type: Article

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