Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric

Applied Physics Letters

Volumn 87, Issue 14, 2005, Pages 1-3

  Lai, K ^a   Ye, P D ^b   Pan, W ^c   Tsui, D C ^a   Lyon, S A ^a   Muhlberger M ^d   Schaffler F ^d  

^a Princeton University   (United States)

^b PURDUE UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ALD DIELECTRIC; GATE DIELECTRIC;

CARRIER CONCENTRATION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; MOS DEVICES;

SILICA;

EID: 28344434101     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2076439     Document Type: Article

References (10)

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