SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 324-327

Si/SiGe n-type inverted modulation doping using ion implantation

(7) Ahmed, A a Dunford, R B a Paul, D J a Pepper, M a Churchill, A C b Robbins, D J b Pidduck, A J b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRON GAS; FIELD EFFECT SEMICONDUCTOR DEVICES; HALL EFFECT; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; THIN FILM CIRCUITS;

MODULATION DOPING;

SEMICONDUCTING FILMS;

EID: 0034224891 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(00)00873-7 Document Type: Article

Times cited : (3)

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