Electronic effects in manganite/insulator interfaces: Interfacial enhancement of the insulating tunneling barriers

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Volumn 4, Issue 3, 2008, Pages 365-371

  Balcells, Lluis ^a   Abad, Llibertat ^a   Rojas, Humberto ^a,b   Del Pino, Angel Perez ^a   Estrade, Sonia ^c   Arbiol, Jordi ^c,d   Peiro, Francisca ^c   Martínez, Benjamin ^a  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b FACULTAD DE CIENCIAS   (Venezuela)

^c UNIVERSITY OF BARCELONA   (Spain)

^d UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Conductivity; Interfaces; Manganites; Perovskites; Tunneling

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; ELECTRON TUNNELING; HETEROJUNCTIONS; MANGANITES; PEROVSKITE;

INSULATING TUNNELING BARRIERS; INTERFACE-INDUCED ENHANCEMENT; SIMMONS MODEL; TUNNELING CONDUCTION;

INTERFACES (MATERIALS);

GOLD; MANGANESE DERIVATIVE; MANGANITE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

GOLD; MANGANESE COMPOUNDS; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, TRANSMISSION;

EID: 41049104712     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200700537     Document Type: Article

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