Characterization of the Schottky barrier in SrRuO3/Nb: SrTiO3 junctions

Applied Physics Letters

Volumn 90, Issue 14, 2007, Pages

  Hikita, Y ^a   Kozuka, Y ^a   Susaki, T ^a   Takagi, H ^a   Hwang, H Y ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; NIOBIUM; PERMITTIVITY; PEROVSKITE; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION;

BUILT-IN POTENTIAL; SCHOTTKY BARRIER HEIGHT;

STRONTIUM COMPOUNDS;

EID: 34047257670     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2719157     Document Type: Article

References (21)

1. P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn, Phys. Rev. Lett. 73, 2107 (1994).
2. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
3. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
4. H. Katsu, H. Tanaka, and T. Kawai, Appl. Phys. Lett. 76, 3245 (2000).
5. N. Nakagawa, M. Asai, Y. Mukunoki, T. Susaki, and H. Y. Hwang, Appl. Phys. Lett. 86, 082504 (2005).
6. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).
7. R. Tung, Mater. Sci. Eng., R. 35, 1 (2001).
8. A. M. Goodman and J. J. O'Neill, Jr., J. Appl. Phys. 37, 3580 (1966).
9. N. Newman, T. Kendelewicz, D. Thomson, S. H. Pan, S. J. Eglash, and W. E. Spicer, Solid-State Electron. 28, 307 (1985).
10. M. A. Saifi and L. E. Cross, Phys. Rev. B 2, 677 (1970).
11. C. B. Eom, R. J. Cava, R. M. Fleming, J. M. Phillips, R. B. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewski, and W. F. Peck, Jr., Science 258, 1766 (1992).
12. N. Nakagawa, H. Y. Hwang, and D. A. Muller, Nat. Mater. 5, 204 (2006).
13. R. H. Fowler, Phys. Rev. 38, 45 (1931).
14. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
15. X. Fang and T. Kobayashi, Appl. Phys. A: Mater. Sci. Process. A69, S587 (1999).
16. J. Robertson and C. W. Chen, Appl. Phys. Lett. 74, 1168 (1999).
17. T. Yamamoto, S. Suzuki, K. Kawaguchi, and K. Takahashi, Jpn. J. Appl. Phys., Part 1 37, 4737 (1998).
18. A. M. Goodman and D. M. Perkins, J. Appl. Phys. 35, 3351 (1964).
19. B. Stoecky, Appl. Phys. Lett. 36, 384 (1980).
20. Z. Sroubek, Phys. Rev. B 2, 3170 (1970).
21. T. Susaki, N. Nakagawa, and H. Y. Hwang, Phys. Rev. B 75, 104409 (2007).