Microstructure and electrical properties of Cu films obtained by chemical vapor deposition of copper(I) pentafluoropropionate complexes with vinyltrialkylsilanes

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 3924-3930

  Piszczek, P ^a   Szymanska I ^a   Bala W ^a   Bartkiewicz, K ^a   Talik, E ^b   Heiman, J ^b  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^b UNIVERSITY OF SILESIA   (Poland)

Author keywords

Chemical vapor deposition; Copper layers; Copper(I) precursors; Electrical conductivity; Microstructural properties; Surface analysis

Indexed keywords

COPPER; DEPOSITION; MICROSTRUCTURE; SILANES; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE COPPER; VINYLTRIALKYLSILANES;

CHEMICAL VAPOR DEPOSITION;

EID: 40849116617     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.173     Document Type: Article

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