MOCVD of silver thin films from the (1,1,1,5,5,5-Hexafluoro-2,4-pentanedionato)silver[bis(trimethylsilyl)acetylene] complex

Chemical Vapor Deposition

Volumn 7, Issue 3, 2001, Pages 117-120

  Chi, Kai Ming ^a   Lu, Ya Hui ^a  

^a NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

Author keywords

( Diketonato)silver(alkyne) complex; MOCVD; Silver thin films

Indexed keywords

EID: 0001144904     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(200105)7:3<117::AID-CVDE117>3.0.CO;2-7     Document Type: Article

References (28)

1. A. Sherman, Chemical Vapor Deposition for Microelectronics: Principles, Technology, and Applications, Noyes, Park Ridge, NJ 1987.
2. D. W. Hess, K. F. Jensen, Microelectronics Processing, Chemical Engineering Aspects, ACS, Washington, DC 1989.
3. T. T. Kodas, M. J. Hampden-Smith, The Chemistry of Metal CVD (Eds: T. T. Kodas, M. J. Hampden-Smith), VCH, Weinheim 1994.
4. R. J. H. Voorhoeve, J. Merewether, J. Electrochem. Soc. 1972, 119, 364.
5. C. Oehr, H. Suhe, Appl. Phys. A - Mater. Sci. Process. 1989, 49, 691.
6. M. J. Shapiro, W. J. Lackey, J. A. Hanigofsky, D. N. Hill, W. B. Carter, E. K. Barefield, J. Alloys Compd. 1992, 187, 331.
7. P. M. Jeffries, S. R. Wilson, G. S. Girolami, J. Organomet. Chem. 1993, 449, 203.
8. N. H. Dryden, J. J. Vittal, R. J. Puddephatt, Chem. Mater. 1993, 5, 765.
9. Z. Yuan, N. H. Dryden, J. J. Vittal, R. J. Puddephatt, Chem. Mater. 1995, 7, 1696.
10. S. Serghini-Monim, Z. Yuan, K. Griffiths, P. R. Norton, R. J. Puddephatt, J. Am. Chem. Soc. 1995, 117, 4030.
11. W. Lin, T. H. Warren, R. G. Nuzzo, G. S. Girolami, J. Am. Chem. Soc. 1993, 115, 11644.
12. D. A. Edwards, R. M. Harker, M. F. Mahon, K. C. Molloy, J. Mater. Chem. 1999, 9, 1771.
13. Z. Yuan, N. H. Dryden, X. Li, J. J. Vittal, R. J. Puddephatt, J. Mater. Chem. 1995, 5, 303.
14. C. Xu, M. J. Hampden-Smith, T. T. Kodas, Adv. Mater. 1994, 6, 746.
15. C. Xu, M. J. Hampden-Smith, T. T. Kodas, Chem. Mater. 1995, 7, 1539.
16. C. Xu, M. J. Hampden-Smith, T. T. Kodas, E. N. Duesler, A. L. Rheingold, G. Yap, Inorg. Chem. 1995, 34, 4767.
17. W. Partenheimer, E. H. Johnson, Inorg. Chem. 1972, 11, 2840.
18. W. Partenheimer, E. H. Johnson, Inorg. Synth. 1976, 16, 117.
19. G. Doyle, K. A. Eriksen, D. Van Engen, Organometallics 1985, 4, 830.
20. A. Bailey, T. S. Corbitt, M. J. Hampden-Smith, E. N. Duesler, T. T. Kodas, Polyhedron 1993, 12, 1785.
21. C. Xu, T. S. Corbitt, M. J. Hampden-Smith, T. T. Kodas, E. N. Duesler, J. Chem. Soc., Dalton Trans. 1994, 2841.
22. P. Doppelt, T. H. Baum, L. Ricard, Inorg. Chem. 1996, 35, 1286.
23. K.-M. Chi, K.-H. Chen, H.-C. Lin, K.-J. Lin, Polyhedron 1997, 13, 2147.
24. T. T. Kodas, M. J. Hampden-Smith, The Chemistry of Metal CVD (Eds: T. T. Kodas, M. J. Hampden-Smith), VCH, Weinheim 1994, Ch. 5.
25. K.-M. Chi, K.-H. Chen, S.-M. Peng, G.-H. Lee, Organometallics 1996, 15, 2575.
26. K.-M. Chi, C.-T. Lin, S.-M. Peng, G.-H. Lee, Organometallics 1996, 15, 2660.
27. Equation of the plane: 8.065(15) x + 9.168(14) y - 2.06(3) z = 2.434(4). Standard deviation from the plane for each atom: O(1), -0.0002(6) Å; O(2), 0.002(6) Å; C(1), -0.010(8) Å; C(2), 0.009(7) Å; Ag, 0.190(3) Å.
28. K.-M. Chi, H.-C. Hou, P-T. Hung, S.-M. Peng, G.-H. Lee, Organometallics 1995, 14, 2641.