Incubation time for chemical vapor deposition of copper from hexafluoroacetylacetonate-copper (I) - vinyltrimethoxysilane

Applied Surface Science

Volumn 161, Issue 1, 2000, Pages 149-154

  Hong, Lu Sheng ^a   Jeng, Muh Gueng ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; FILM GROWTH; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PLATINUM; RATE CONSTANTS; SILICON; SUBSTRATES; SURFACES; TEMPERATURE; TITANIUM NITRIDE;

COPPER FILMS; FIRST ORDER REACTION APPROXIMATION; HETEROGENEOUS NUCLEATION; HEXAFLUOROACETYLACETONATE VINYLTRIMETHOXYSILANE; INCUBATION TIME; PRECURSOR; SURFACE REACTIONS;

COPPER;

EID: 0034227323     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00278-6     Document Type: Article

References (21)

1. Kaloyeros A.E., Garhart A.F.J., Brooks K.C., Ghosh S.K., Saxena A.N., Luehrs F. J. Electron. Mater. 19:1990;271.
2. Hara K., Kojima T., Kukimoto H. Jpn. J. Appl. Phys. 26:1987;L1107.
3. J.A.T. Norman, P.N. Dyer, U.S. Patent 5098516 (1992).
4. Lecohier B., Calpini B., Philippoz J.M., Stumm T., van den Bergh H. Appl. Phys. Lett. 60:1992;3114.
5. Norman J.A.T., Muratore B.A., Dyer P.N., Roberts D.A., Hochberg A.K. J. Phys. IV. C2:1991;271.
6. Cohen S.L., Liehr M., Kasi S. Appl. Phys. Lett. 60:1992;50.
7. Lee S.Y., Rha S.K., Lee W.J., Kim D.W., Hwang J.S., Park C.O. Jpn. J. Appl. Phys. 36:1997;5249.
8. Awaya N., Arita Y. Thin Solid Films. 262:1995;12.
9. Lecohier B., Calpini B., Philippoz J.M., ven den Berg H. J. Appl. Phys. 72:1992;2022.
10. Awaya N., Ohno K., Arita Y. J. Electrochem. Soc. 142:1995;3173.
11. Jain A., Farkas J., Kodas T.T., Chi K.M., Hampden-Smith M.J. Appl. Phys. Lett. 61:1992;2662.
12. Kim Y.S., Kim D.J., Kwak S.K., Kim E.K., Min S.K., Jung D. Jpn. J. Appl. Phys. 37:1998;L462.
13. Kim D.H., Wentorf R.H., Gill W.N. J. Vac. Sci. Technol., A. 12:1994;153.
14. Jain A., Lodas T.T., Jairath R., Hampden-Smith M.J. J. Vac. Sci. Technol., B. 11:1993;2107.
15. Lee W.J., Min J.S., Rha S.K., Chun S.S., Park C.O., Kim D.W. J. Mater. Sci.: Mater. Electron. 7:1996;111.
16. Yoen H.Y., Park Y.B., Rhee S.W. J. Mater. Sci.: Mater. Electron. 8:1997;189.
17. Jun C.H., Kim Y.T., Baek J.T., Yoo H.J., Kim D.R. J. Vac. Sci. Technol., A. 14:1996;3214.
18. Hong L.S., Lin M.Z. Jpn J. Appl. Phys. 36:1997;L711.
19. Sheih M.D., Lee C. Chem. Eng. Sci. 47:1992;4017.
20. L.S. Hong, M.G. Jeng, Jpn J. Appl. Phys., in publication.
21. Tanuma S., Powell C.J., Penn D.R. Surf. Interface Anal. 17:1991;911.