Inactivation of low-dose implanted phosphorus pileup in the silicon side of an Si/SiO2 interface after oxidation

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 367-371

  Sato, Hisako ^a   Yanagisawa, Yasunobu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; OXIDATION; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY (ICPMS); PILEUP PHENOMENON; SPREADING RESISTANCE PROFILING (SRP) MEASUREMENTS;

HETEROJUNCTIONS;

EID: 0032712874     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391615     Document Type: Article

References (3)

1. Y. Sato, M. Watanabe, and K. Imai, J. Electrochcm. Soc., 140, 2679 (1993).
2. P. B Griffin, S. W. Crowder, and J. M. Knight, Appl. Phys. Lett., 67, 482 (1995).
3. H. R. Soleimani, J. Electrochem. Soc., 141, 2182 (1994).