Length dependence of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6902, Issue , 2008, Pages

  Plumwongrot, D ^a   Tamura, Y ^a   Nishimoto, Y ^a   Kurokawa, M ^a   Okumura, T ^a   Maruyama, T ^a,b   Nishiyama, N ^a   Arai, S ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CH 4 H2 RIE; GaInAsP InP quantum wire structures; Metal mask liftoff; OMVPE regrowth; Polarization anisotropy; Strain compensated quantum well structure

Indexed keywords

ANISOTROPY; ELECTRON BEAMS; LITHOGRAPHY; LUMINESCENCE; POLARIZATION; SEMICONDUCTOR QUANTUM WIRES;

PHOTO LUMINESCENCE (PL) MEASUREMENT; POLARIZATION ANISOTROPY; POLARIZATION PROPERTY; ROOM TEMPERATURE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 40749130006     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.762201     Document Type: Conference Paper

References (26)

1. Y. Arakawa and A. Yariv, "Quantum Well Lasers-Gain, Spectra, Dynamics," IEEE J. Quantum Electron., vol. QE-22, no. 9, pp. 1887-1899, Sep. 1986.
2. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the Threshold of Three-Dimensional Quantum-Box Lasers," IEEE J. Quantum Electron., vol. QE-22, no. 9, pp. 1915-1921, Sep. 1986.
3. S. Ueno, Y. Miyake, and M. Asada, "Advantage of Strained Quantum Wire Lasers," Jpn. J. Appl. Phys., vol. 31, no. 2A, pp. 286-287, Feb. 1992.
4. G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, "Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.5Ga0.85As quantum well" Electron. Lett., vol. 35, no. 14, pp. 1163-1165, Jul. 1999.
5. O. B. Shchekin and D. G. Deppe, "The role of p-type doping and the density of states on the modulation response of quantum dot lasers," Appl. Phys. Lett., vol. 80, no. 15, pp 2758-2760, Apr. 2002.
6. M. Asada, Y. Miyamoto, and Y. Suematsu, "Theoretical Gain of Quantum-Well Wire Lasers," Jpn. J. Appl. Phys., vol. 24, no. 2, pp. L95-L97, Feb. 1985.
7. P. J. Pearah, A. C. Chen, A. M. Moy, K. C. Hsieh and K. Y. Cheng, "AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process," IEEE J. Quantum Electron., vol. 30, no. 2, pp. 608-618, Feb. 1994.
8. P. Ils, Ch. Greus, A. Forchel, V. D. Kulakovskii, N. A. Gippius, and S. G. Tikhodeev, "Linear polarization of photoluminescence emission and absorption in quantum-well wire structures: Experiment and theory," Phys. Rev. B, vol. 51, no. 7, pp. 4272-4277, Feb. 1995.
9. J. Yoshida, K. Kishino, A. Kikuchi, and I. Nomura, "Continuous-Wave (CW) operation of GaInP-AlGaInP visible compressively strained multiple quantum-wire (CS-WQWR) lasers," IEEE J. Selected Topics in Quantum Electron., vol.1, no.2, pp.173-182, Jun. 1995.
10. M. Notomi, S. Nojima, M. Okamoto, H. Iwamura, and T. Tamamura, "Size dependence of lateral quantum-confinement effects of the optical response in In0.53Ga0.47As/InP quantum wires," Phys. Rev. B, vol. 52, no. 15, pp. 11073-11088, Oct. 1995.
11. T. Kojima, S. Arai, and G. U. Bacher, "Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth," Jpn. J. Appl. Phys., vol. 37, no. 1A/B, pp. L46-L49, Jan. 1998.
12. F. Vouilloz, D. Y. Oberli, M. A. Dupertuis, A. Gustafsson, F. Reinhardt, and E. Kapon, "Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires," Phys. Rev. B, vol. 57, no. 19, pp. 12378-12387, May 1998.
13. A. A. Ukhanov, R. H. Wang, T. J. Rotter, A. Stintz, L. F. Lester, P. G. Eliseev, and K. J. Malloy, "Orientation dependence of the optical properties in InAs quantum-dash lasers on InP," Appl. Phys. Lett., vol. 81 , no. 6, pp. 981-983, Aug. 2002.
14. D. Plumwongrot, T. Maruyama, A. Haque, H. Yagi, K. Miura, Y. Nishimoto, and S. Arai, "Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures," submitted to Jpn. J. Appl. Phys.
15. D. Plumwongrot, T. Maruyama, A. Haque, H. Yagi, K. Miura, Y. Nishimoto, and S. Arai, "Polarization Anisotropy of Optical Gain Influenced Lasing Characteristics in Strain-Compensated GaInAsP/InP Quantum Wire Lasers," submitted to Jpn. J. Appl. Phys.
16. N. Hatori, T. Mukaihara, Y. Hayashi, N. Ohnoki, F. Koyama, and K. Iga, "Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers," J. Appl. Phys., vol. 35, no. 3, pp. 1777-1778, Mar. 1996.
17. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque, and S. Arai, "Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method," Jpn. J. Appl. Phys., vol. 42, no. 7A, pp. L748-L750, Jul. 2003.
18. N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura, and S. Arai, "Sub-milliampere operation of 1.55 μm wavelength high index-coupled buried heterostructure distributed feedback lasers," Electron. Lett., vol. 36, no. 14, pp 1213-1214, Jul. 2000.
19. Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, and S. Arai, "Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes," Jpn. J. Appl. Phys., vol. 46, no. 2, pp. L34-L36, Jan. 2007.
20. S. M. Ullah, R. Suemitsu, S. H. Lee, M. Otake, N. Nishiyama, and S. Arai, "Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm," Jpn. J. Appl. Phys., vol. 46, no. 44, pp. L1068-L1070, Nov. 2007.
21. H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama, and S. Arai, "Micro-photoluminescence characterizations of GaInAsP/InP single quantum wires fabricated by dry etching and regrowth," J. Appl. Phys., vol. 102, no. 9, pp. 093509, Nov. 2007.
22. C. Dix, P. G. Flavin, P. Hendy, and M. E. Jones, "0.1 μ scale lithography using a conventional electron beam system," J. Vac. Sci. Technol. B, vol. 3, no. 1, pp. 131-135, Jan./Feb. 1985.
23. S. Aya, K. Kise, H. Yabe, and K. Marumoto, "Validity of Double and Triple Gaussian Functions for Proximity Effect Correction in X-ray Mask Writing," Jpn. J. Appl. Phys., vol. 35, no. 3, pp. 1929-1936, Mar. 1996.
24. D. L. Smith and C. Mailhiot, "Theory of semiconductor superlattice electronic structure," Rev. Mod. Phys., vol. 62, no. 1, pp. 173-234, Jan. 1990.
25. S. W. Corzine, R. H. Yan, and L. A. Coldren, " Optical gain in III-V bulk and quantum well semiconductors," Quantum well lasers, ed. P. S. Zory (Academic Press, London, 1993) Chap. 1.
26. M. Tsuchiya, J. M. Gaines, R. H. Yan, R. J. Simes, P. O. Holtz, L. A. Coldren, and P. M. Petroff, "Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum Confinement," Phys. Rev. Lett., vol. 62, no. 4, pp. 466-469, Jan. 1989.