Validity of double and triple Gaussian functions for proximity effect correction in X-ray mask writing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1929-1936

  Aya, Sunao ^a   Kise, Koji ^a   Yabe, Hideki ^a   Marumoto, Kenji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Deposited energy intensity; Double Gaussian function; Electron beam lithography; Electron beam writing; Exposure intensity; Proximity effect; Proximity effect correction; Triple Gaussian function; X ray lithography; X ray mask

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON BEAM LITHOGRAPHY; FUNCTIONS; HEAVY METALS; MASKS; NUMERICAL ANALYSIS; SILICON; SUBSTRATES; TITANIUM; TUNGSTEN;

ACCELERATION VOLTAGE; ATOMIC NUMBERS; DEPOSITED ENERGY INTENSITY DISTRIBUTION; DOSE MODULATION RATIOS; GAUSSIAN FUNCTIONS; PROXIMITY EFFECT CORRECTION; X RAY MASK WRITING;

X RAY LITHOGRAPHY;

EID: 0030101991     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1929     Document Type: Article

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