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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1777-1778

Design and fabrication of InGaAs/GaAs quantum wires for vertical-cavity surface-emitting lasers

(6) Hatori, Nobuaki a Mukaihara, Toshikazu a Hayashi, Yukio a Ohnoki, Noriyuki a Koyama, Fumio a Iga, Kenichi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

InGaAs; MOCVD; Polarization control; Quantum wire; Surface emitting laser

Indexed keywords

ANISOTROPY; CURRENT DENSITY; ELECTRIC VARIABLES MEASUREMENT; LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CURRENT INJECTION MEASUREMENTS; INDIUM GALLIUM ARSENIDE GALLIUM ARSENIDE QUANTUM WIRES; POLARIZATION ANISOTROPY; THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030102157 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1777 Document Type: Article

Times cited : (5)

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