Effect of 3C-SiC (100) initial surface stoichiometry on bias enhanced diamond nucleation

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Arnault, J C ^a,c   Intiso, L ^a,b   Saada, S ^a   Delclos, S ^a   Bergonzo, P ^a   Polini, R ^b  

^a CEA SACLAY   (France)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND CUTTING TOOLS; IN SITU PROCESSING; MICROWAVES; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS ENHANCED NUCLEATION (BEN); INITIAL SURFACE STOICHIOMETRY; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION REACTOR; RECONSTRUCTED SURFACES;

STOICHIOMETRY;

EID: 33846593494     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433033     Document Type: Article

References (19)

1. E. Bedermann, M. Ciobanu, S. H. Connell, A. M. O. D. da Costa, L. Fernandez-Hernando, A. Oh, and J. P. F. Sellschop, Phys. Status Solidi A 201, 2521 (2004).
2. J. Bol, E. Bedermann, W. deBoer, E. Grigorief, F. Hauler, and L. Jungermann, IEEE Trans. Nucl. Sci. 51, 1999 (2004).
3. H. Liu and D. S. Dandy, in Diamond Chemical Vapour Deposition: Nucleation and Early Growth Stages, edited by, R. F. Bunshah, G. E. McGuire, and, S. M. Rossnagel, (Noyes, Park Ridge, NJ, 1995), Chap., pp. 150-159.
4. K. Mitsuda, Y. Kojima, T. Yoshida, and K. Akashi, J. Mater. Sci. 22, 1557 (1987).
5. S. Yugo, T. Kanai, and T. Kimura, Diamond Relat. Mater. 1, 929 (1992).
6. T. Tachibana, Y. Yokota, K. Miyata, T. Onishi, K. Kobashi, M. Tarutani, Y. Takai, R. Shimizu, and Y. Shintani, Phys. Rev. B 56, 15967 (1997).
7. H. Kawarada, T. Suesada, and H. Nagasawa, Appl. Phys. Lett. 66, 583 (1995).
8. V. M. Bermudez, Phys. Status Solidi A 202, 447 (1997).
9. J. C. Arnault, S. Delclos, S. Saada, N. Tranchant, and P. Bergonzo, J. Appl. Phys. (in press).
10. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 11, 577 (1988).
11. C. J. Powell, A. Jablonski, A. Naumkin, A. Kraut-Vass, J. M. Conny, and J. R. Rumble, Jr., J. Electron Spectrosc. Relat. Phenom. 114-116, 1097 (2001).
12. J. C. Arnault, S. Saada, S. Delclos, L. Intiso, N. Tranchant, R. Polini, and P. Bergonzo, Diamond Relat. Mater. (accepted for publication).
13. F. R. McFeely, S. P. Kowalczyk, L. Ley, R. G. Cavell, R. A. Pollack, and D. A. Shirley, Phys. Rev. B 9, 5268 (1974).
14. Y. Wang, R. W. Hoffman, and J. C. Angus, J. Vac. Sci. Technol. A 8, 2226 (1990).
15. M. Tomellini, R. Polini, and V. Sessa, J. Appl. Phys. 12, 7573 (1991).
16. M. Avrami, J. Chem. Phys. 0021-9606 10.1063/1.1750380 7, 1103 (1939); M. Avrami, J. Chem. Phys. 8, 212 (1940).
17. M. Avrami, J. Chem. Phys. 0021-9606 10.1063/1.1750380 7, 1103 (1939); M. Avrami, J. Chem. Phys. 8, 212 (1940).
18. M. Fanfoni, R. Polini, V. Sessa, M. Tomellini, and M. Volpe, Appl. Surf. Sci. 152, 126 (1999).
19. R. Polini and M. Tomellini, Diamond Relat. Mater. 2, 952 (1993).