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Volumn 516, Issue 11, 2008, Pages 3507-3511

Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory

Author keywords

BCl3 Ar; Cl2 Ar; Inductively coupled plasma reactive ion etching; Magnetic random access memory; MTJ stack

Indexed keywords

ANISOTROPIC ETCHING; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY; RANDOM ACCESS STORAGE; SHRINKAGE;

DIMENSIONAL SHRINKAGE; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING; MAGNETIC TUNNEL JUNCTION (MTJ);

TUNNEL JUNCTIONS;

EID: 40649125039 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2007.08.020 Document Type: Article

Times cited : (17)

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