6H-SiC photoconductive switches triggered at below bandgap wavelengths

Conference Record of the International Power Modulator Symposium and High Voltage Workshop

Volumn , Issue , 2006, Pages 215-218

  Sullivan, J S ^a   Stanley, J R ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DC GENERATORS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC SWITCHES; ELECTRIC SWITCHGEAR; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ENERGY GAP; METALLIZING; MODULATION; NONMETALS; OPTICAL DESIGN; PARTICLE DETECTORS; POWDERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SWITCHES; SILICON; SUBSTRATES; SWITCHES; THERMOELECTRICITY; TRANSITION METALS; VANADIUM;

BAND GAPS; CRITICAL ELECTRIC FIELD STRENGTH; CRITICAL FIELD STRENGTH; DIELECTRIC WALLS; ELECTRIC FIELD STRENGTH (EFS); FAST SWITCHING; HIGH ELECTRON SATURATION VELOCITY; HIGH-THERMAL CONDUCTIVITY; HIGH-VOLTAGE (HV); INTERNATIONAL (CO); OPTICAL PULSES; PEAK CURRENTS; PHOTO CONDUCTIVE SWITCHES; PHOTO SWITCH; PHOTOSWITCHES; SEMI-INSULATING; SIC SUBSTRATES; SILICON CARBIDE (SIC);

SILICON CARBIDE;

EID: 48349099565     PISSN: 10768467     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MODSYM.2006.365220     Document Type: Conference Paper

References (4)

1. S. Dogan et al., "4H-SiC photoconductive switching devices for use in high-power applications," Applied Physics Letters, vol. 82, pp. 3107-3109, May 2003.
2. S. Sheng, M. Spencer, X. Tang, P. Zhou, and G. Harris, "Polycrystalline cubic silicon carbide photoconductive switch," IEEE Electron Device Letters, vol. 18, pp 372-374, August 1997.
3. +-GaN subcontact layer on 4H-SiC high-power photoconductive switch," Applied Physics Letters 86, p. 261108, June, 2005.
4. P. Cho, J. Goldhar, C. Lee, S. Saddow, and P. Neudeck, "Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices," Journal of Applied Physics, vol. 77, pp. 1591-1599, Feb. 1995.