SCOPUS 정보 검색 플랫폼

Volumn 527-529, Issue PART 2, 2006, Pages 1387-1390

High power photoconductive switch of 4H-SiC with damage-free electrodes by using n+-GaN subcontact layer

Author keywords

Contact damage; High power photoconductive switch

Indexed keywords

CONTACT RESISTANCE; ELECTROCHEMICAL ELECTRODES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SILICON CARBIDE; VAPOR PHASE EPITAXY;

CONTACT DAMAGE; HIGH POWER PHOTOCONDUCTIVE SWITCHES; ORGANOMETALLIC VAPOR PHASE EPITAXY; SUBCONTACT LAYERS;

OPTICAL SWITCHES;

EID: 37848999357 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.1387 Document Type: Conference Paper

Times cited : (2)

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