Atomistic simulations of structural relaxation processes in amorphous silicon

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 686-689

  Ishimaru, Manabu ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI); ATOMISTIC SIMULATIONS; BOND-ANGLE DISTRIBUTION; EXPERIMENTAL MEASUREMENTS; INTERATOMIC POTENTIAL; MD SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; PHONON DENSITY; RADIAL DISTRIBUTION FUNCTIONS; STATIC STRUCTURE FACTORS; STRUCTURAL CHANGE;

AMORPHOUS SILICON; SILICON;

STRUCTURAL RELAXATION;

EID: 0037080739     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425437     Document Type: Article

References (38)

1. S. Roorda, S. Doorn, W. C. Sinke, P. M. L. O. Scholte, and E. van Loenen, Phys. Rev. Lett. 62, 1880 (1989).
2. S. Roorda, W. C. Sinke, J. M. Poate, D. C. Jacobson, S. Dierker, B. S. Dennis, D. J. Eaglesham, F. Spaepen, and P. Fuoss, Phys. Rev. B 44, 3702 (1991).
3. R. Tsu, J. G. Hernandez, and F. H. Pollak, Solid State Commun. 54, 447 (1985).
4. J. S. Lannin, L. J. Pilione, S. T. Kshirsagar, R. Messier, and R. C. Ross, Phys. Rev. B 26, 3506 (1982).
5. W. Sinke, T. Warabisako, M. Miyao, T. Tokuyama, S. Roorda, and F. W. Saris, J. Non-Cryst. Solids 99, 308 (1988).
6. S. Kugler, G. Molnár, G. Petö, E. Zsoldos, L. Rosta, A. Menelle, and R. Bellissent, Phys. Rev. B 40, 8030 (1989).
7. J. Fortner and J. S. Lannin, Phys. Rev. B 39, 5527 (1989).
8. W. A. Kamitakahara, C. M. Soukoulis, H. R. Shanks, U. Buchenau, and G. S. Grest, Phys. Rev. B 36, 6539 (1987).
9. F. Wooten, K. Winer, and D. Weaire, Phys. Rev. Lett. 54, 1392 (1985).
10. M. Durandurdu, D. A. Drabold, and N. Mousseau, Phys. Rev. B 62, 15307 (2000).
11. S. M. Nakhmanson, P. M. Voyles, N. Mousseau, G. T. Barkema, and D. A. Drabold, Phys. Rev. B 63, 235207 (2001).
12. R. Car and M. Parrinello, Phys. Rev. Lett. 60, 204 (1988).
13. I. Stich, R. Car, and M. Parrinello, Phys. Rev. B 44, 11092 (1991).
14. W. D. Luedtke and U. Landman, Phys. Rev. B 37, 4656 (1988).
15. W. D. Luedtke and U. Landman, Phys. Rev. B 40, 1164 (1989).
16. M. Ishimaru, S. Munetoh, and T. Motooka, Phys. Rev. B 56, 15133 (1997).
17. R. Biswas, G. S. Grest, and C. M. Soukoulis, Phys. Rev. B 36, 7437 (1987).
18. J. F. Justo, M. Z. Bazant, E. Kaxiras, V. V. Bulatov, and S. Yip, Phys. Rev. B 58, 2539 (1998).
19. See for example, H. Balamane, T. Halicioglu, and W. A. Tiller, Phys. Rev. B 46, 2250 (1992).
20. J. Tersoff, Phys. Rev. B 39, 5566 (1989).
21. M. Ishimaru, K. Yoshida, and T. Motooka, Phys. Rev. B 53, 7176 (1996).
22. M. Ishimaru, K. Yoshida, T. Kumamoto, and T. Motooka, Phys. Rev. B 54, 4638 (1996).
23. S. J. Cook and P. Clancy, Phys. Rev. B 47, 7686 (1993).
24. K. Laaziri, S. Kycia, S. Roorda, M. Chicoine, J. L. Robertson, J. Wang, and S. C. Moss, Phys. Rev. B 60, 13520 (1999).
25. See, for example, M. P. Allen and D. J. Tildesley, Computer Simulation of Liquids (Clarendon, Oxford, 1987).
26. R. Zallen, The Physics of Amorphous Solids (Wiley, New York, 1983).
27. M. Ishimaru, Phys. Rev. B 63, 237401 (2001).
28. experimental>300K. [Note that they assumed that the melting point of c-Si generated by the Tersoff potential is 3000 K, slightly higher than the one estimated by Cook and Clancy (2547±22K) (Ref. 23)].
29. T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, and A. Shintani, Phys. Rev. B 61, 8537 (2000).
30. K. Laaziri, S. Kycia, S. Roorda, M. Chicoine, J. L. Robertson, J. Wanf, and S. C. Moss, Phys. Rev. Lett. 82, 3460 (1999).
31. R. Tsu, in Disordered Semiconductors, edited by M. A. Kastner, G. A. Thomas, and S. R. Ovshinsky (Plenum, New York, 1987), p. 479.
32. P. C. Kelires and J. Tersoff, Phys. Rev. Lett. 61, 562 (1988).
33. M. D. Kluge, J. R. Ray, and A. Rahman, Phys. Rev. B 36, 4234 (1987).
34. S. T. Pantelides, Phys. Rev. Lett. 57, 2979 (1986).
35. I. Stich, M. Parrinello, and J. M. Holender, Phys. Rev. Lett. 76, 2077 (1996).
36. S. Knief and W. von Niessen, Phys. Rev. B 60, 5412 (1999).
37. D. Beeman, R. Tsu, and M. F. Thorpe, Phys. Rev. B 32, 874 (1985).
38. T. Saito, T. Karasawa, and I. Ohdomari, J. Non-Cryst. Solids 50, 271 (1982).