InGaP/InGaAs double delta-doped channel transistor

Electronics Letters

Volumn 39, Issue 13, 2003, Pages 1016-1018

  Chuang, Hung Ming ^a   Cheng, Shiou Ying ^b   Liao, Xin Da ^a   Chen, Chun Yuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MICROWAVES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CHANNEL TRANSISTORS;

TRANSISTORS;

EID: 0038722351     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030660     Document Type: Article

References (8)

1. 0.85As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage', IEEE Electron Device Lett., 1997, 18, pp. 150-152
2. LOUR, W.S., TSAI, M.K., CHEN, K.C., WU, Y.W., TAN, S.W., and YANG, Y.J.: 'Dual-gate InQaP/InGaAs pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing', Semicond, Sci. Technol., 2001, 16, pp. 826-830
3. MESHKINPOUR, M., GOORSKY, M.S., CHU, G., STREIT, D.C., BLOCK, T.R., and WOJTOWICZ, M.: 'Role of misfit dislocations on pseudomorphic high electron mobility transistor', Appl. Phys. Lett., 1995, 66, pp. 748-750
4. CHIU, H.C., YANG, S.C., and CHAN, Y.J.: 'AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures', IEEE Trans. Electron Devices, 2001, 48, pp. 2210-2215
5. +-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor', IEEE Trans. Electron Devices, 2001, 48, pp. 2677-2683
6. 0.7As/GaAs quantum-well delta-doped channel FET grown by molecular-beam epitaxy', IEEE Trans. Electron Devices, 1989, 36, pp. 2615-2616
7. SCHUBERT, E.F., CUNNINGHAM, J.E., and TSANG, W.T: 'Self-aligned enhancement-mode and depletion-mode GaAs field-effect transistors employing the δ-doping technique', Appl. Phys. Lett., 1986, 40, pp. 1729-1731
8. 0.75As/GaAs quantum-well delta-doped channel FET grown by LP-MOCVD', IEEE Electron Device Lett., 1992, 13, pp. 270-272