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Materials Chemistry and Physics

Volumn 60, Issue 1, 1999, Pages 22-27

Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges

(4) Chang, S J a Juang, Y Z a Nayak, O K b Shiraki, Y b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BORON COMPOUNDS; CHLORINE; ELECTRIC DISCHARGES; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

BORON CHLORIDE; CARBON TETRAFLUORIDE; SELECTIVE ETCHING; SILICON GERMANIDE;

HETEROJUNCTIONS;

EID: 0032681842 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(99)00034-6 Document Type: Article

Times cited : (8)

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