SiGe heterostructure field-effect transistor using V-shaped confining potential well

IEEE Electron Device Letters

Volumn 24, Issue 2, 2003, Pages 69-71

  Lin, Yu Min ^a   Wu, San Lein ^b   Chang, Shoou Jinn ^a   Koh, Shinji ^c   Shiraki, Yasuhiro ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Carrier confinement; Diffusion barrier; V shaped confining potential well

Indexed keywords

DIFFUSION; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

DIFFUSION BARRIER;

FIELD EFFECT TRANSISTORS;

EID: 0038732574     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807709     Document Type: Article

References (11)

1. Q. Chen, M. Willander, J. Carter, C. H. Thaki, and E. R. A. Evans, "Fabrication and performances of delta-doped Si n-MESFET grown by MBE," Electron. Lett., vol. 29, no. 8, pp. 671-673, 1993.
2. 0.85As heterostructure pulsed doped-channel FETs," Electron. Lett., vol. 30, no. 13, pp. 1094-1095, 1994.
3. H. Shiomi, Y. Nishibayashi, N. Toda, and S. Shikata, "Pulse-doped diamond p-channel metal semiconductor field-effect transistor," IEEE Electron Device Lett., vol. 16, pp. 36-38, Jan. 1995.
4. S. L. Wu and S. J. Chang, "Si field-effect transistor with doping dipole in buffer layer," Appl. Phys. Lett., vol. 75, no. 18, pp. 2848-2850, 1999.
5. C. R. Bolognesi, M. W. Dvorak, and D. H. Chow, "High-transconductance delta-doped InAs-AlSb HFETs with ultrathin silicon-doped InAs quantum well donor layer," IEEE Electron Device Lett., vol. 19, pp. 83-85, Mar. 1998.
6. J. D. Werking, C. R. Bolognesi, L. D. Chang, C. Nguyen, E. L. Hu, and H. Kroemer, "High-transconductance InAs-AlSb heterojunction field-effect transistors with δ-doped AlSb upper barriers," IEEE Electron Device Lett., vol. 13, pp. 164-166, Mar. 1992.
7. M. R. Sardela, Jr., H. H. Radamson, L. Hultman, and G. V. Hansson, "Growth, characterization and device fabrication of boron delta-doped structure by Si-molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 33, p. 2279, 1994.
8. C. L. Wu, W. C. Hsu, H. M. Shieh, and M. S. Tsai, "A novel δ-doped GaAs/InGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability," IEEE Electron Device Lett., vol. 16, pp. 112-114, Mar. 1995.
9. X. Zheng, T. K. Carns, K. L. Wang, and B. Wu, "Electron mobility enhancement from coupled wells in δ-doped GaAs," Appl. Phys. Lett., vol. 62, pp. 504-506, 1993.
10. T. K. Cams, X. Zheng, and K. L. Wang, "Enhancement of Si hole mobility in coupled δ-doped wells," Appl. Phys. Lett., vol. 62, pp. 3455-3457, 1993.
11. S. J. Wang, S. L. Wu, F. Y. Yeh, and C. Y. Cheng, "Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled δ-doped wells," Jpn. J. Appl. Phys., vol. 33, no, 4B, pp. 2429-2434, 1994.