Resonant-cavity-enhanced far-infrared upconversion imaging devices

IEEE Journal of Quantum Electronics

Volumn 43, Issue 5, 2007, Pages 411-418

  Wu, L K ^a   Shen, W Z ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Cavity resonators; Infrared imaging; Optical frequency conversion; Semiconductor device modeling

Indexed keywords

EXTRACTION EFFICIENCIES; FAR-INFRARED; FIR DETECTORS; GAAS; GAAS-ALGAAS; HIGH RESOLUTION; HOMOJUNCTION; IMAGING DEVICE; INTERNAL PHOTOEMISSION; NEAR INFRARED LIGHT; PHOTON ABSORPTIONS; PHOTON RECYCLING; RESONANT CAVITY; RESONANT CAVITY ENHANCED; SEMICONDUCTOR DEVICE MODELING; SEMICONDUCTOR IMAGING; STRUCTURAL PARAMETER; UP-CONVERSION; UP-CONVERTER;

CAVITY RESONATORS; EXTRACTION; GALLIUM ALLOYS; GALLIUM ARSENIDE; IMAGING SYSTEMS; INFRARED DEVICES; LIGHT; LIGHT EMITTING DIODES; MICROWAVE DEVICES; MULTIPHOTON PROCESSES; NATURAL FREQUENCIES; OPTICAL FREQUENCY CONVERSION; OPTICAL MATERIALS; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SWITCHES; THERMOGRAPHY (IMAGING);

QUANTUM EFFICIENCY;

EID: 39749154100     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.894736     Document Type: Article

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