Characteristics of Integrated QWIP-HBT-LED Up-Converter

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2378-2387

  Oktyabrsky, Serge ^a   Khmyrova, Irina ^b   Ryzhii, Victor ^b  

^a State University of New York   (United States)

^b UNIVERSITY OF AIZU   (Japan)

Author keywords

Focal plane array; Heterostructure bipolar transistor (HBT); Imaging sensor; Light emitting diode (LED); Noise; Quantum conversion efficiency; Quantum well infrared photodetector (QWIP)

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); FREQUENCY CONVERTERS; HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED IMAGING; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; PHOTODIODES; READOUT SYSTEMS; SEMICONDUCTOR QUANTUM WELLS; SILICON SENSORS; SPURIOUS SIGNAL NOISE; THERMAL EXPANSION;

FOCAL PLANE ARRAYS (FPA); INTERSUBBAND ABSORPTION;

ELECTRIC CONVERTERS;

EID: 0347338040     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819249     Document Type: Article

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