-
1
-
-
0000854765
-
The Atlas SIRTF, Infrared Phys
-
M. W. Werner, “The Atlas SIRTF,” Infrared Phys. Technol. 35, 539-550 (1994).
-
(1994)
Technol.
, vol.35
, pp. 539-550
-
-
Werner, M.W.1
-
2
-
-
0343982110
-
-
M. H. Francombe and J. L. Vossen, eds. (Academic, New York
-
A. G. U. Perera, in Physics of Thin Films, M. H. Francombe and J. L. Vossen, eds. (Academic, New York, 1995), Vol. 21, pp. 1-75.
-
(1995)
Physics of Thin Films
, vol.21
, pp. 1-75
-
-
Perera, A.G.U.1
-
3
-
-
0031551674
-
Bias effects in high performance GaAs homojunction far-infrared detectors
-
W. Z. Shen, A. G. U. Perera, H. C. Liu, M. Buchanan, and W. J. Schaff, “Bias effects in high performance GaAs homojunction far-infrared detectors,” Appl. Phys. Lett. 71,2677-2679 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2677-2679
-
-
Shen, W.Z.1
Perera, A.G.U.2
Liu, H.C.3
Buchanan, M.4
Schaff, W.J.5
-
4
-
-
5344223935
-
Resonant cavity enhanced photonic devices
-
M. S. Unlu and S. Strite, “Resonant cavity enhanced photonic devices,” J. Appl. Phys. 78, 607-639 (1995).
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 607-639
-
-
Unlu, M.S.1
Strite, S.2
-
5
-
-
0032122076
-
Characteristic analysis of resonant-cavity-enhanced (RCE) photodetectors
-
J. A. Jervase and Y. Zebda, “Characteristic analysis of resonant-cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron. 37, 1129-1134 (1998).
-
(1998)
IEEE J. Quantum Electron.
, vol.37
, pp. 1129-1134
-
-
Jervase, J.A.1
Zebda, Y.2
-
8
-
-
84975667706
-
-
2nd ed. (Wiley, New York
-
M. V. Klein and T. E. Furtak, Optics, 2nd ed. (Wiley, New York, 1986), pp. 295-300.
-
(1986)
Optics
, pp. 295-300
-
-
Klein, M.V.1
Furtak, T.E.2
-
9
-
-
0020193772
-
Semiconducting and other major properties of gallium arsenide
-
J. S. Blackemore, “Semiconducting and other major properties of gallium arsenide,” J. Appl. Phys. 53, R123-R181 (1982).
-
(1982)
J. Appl. Phys.
, vol.53
, pp. R123-R181
-
-
Blackemore, J.S.1
-
10
-
-
0035868196
-
Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications
-
A. L. Korotkov, A. G. U. Perera, W. Z. Shen, J. Herfort, K. H. Ploog, W. J. Schaff, and H. C. Liu, “Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications,” J. Appl. Phys. 89, 3295-3300 (2001).
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 3295-3300
-
-
Korotkov, A.L.1
Perera, A.G.U.2
Shen, W.Z.3
Herfort, J.4
Ploog, K.H.5
Schaff, W.J.6
Liu, H.C.7
-
11
-
-
0035890394
-
Radiative recombination characteristics in GaAs multilayer n+-i interfaces
-
+-i interfaces,” J. Appl. Phys. 90, 5444-5446 (2001).
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 5444-5446
-
-
Shen, W.Z.1
Jiang, L.F.2
Yu, G.3
Lai, Z.Y.4
Wang, X.G.5
Shen, S.C.6
Cao, X.7
-
12
-
-
85075783934
-
Long-wave infrared (LWIR) detectors based on III-V materials
-
F. Andreson, M. Strojnik, and I. J. Spiro, eds., Proc. SPIE
-
J. Maserjian, “Long-wave infrared (LWIR) detectors based on III-V materials,” in Infrared Technology XVII, B. F. Andreson, M. Strojnik, and I. J. Spiro, eds., Proc. SPIE 1540, 127-134 (1991).
-
(1991)
Infrared Technology XVII
, vol.1540
, pp. 127-134
-
-
Maserjian, J.1
-
13
-
-
0032140614
-
Effect of emitter layer concentration on the performance of GaAs p+-i homojunction far-infrared detectors: A comparison of theory and experiment
-
references therein
-
+-i homojunction far-infrared detectors: a comparison of theory and experiment,” IEEE Trans. Electron Devices 45, 1671-1677 (1998), and references therein.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 1671-1677
-
-
Shen, W.Z.1
Perera, A.G.U.2
Francombe, M.H.3
Liu, H.C.4
Buchanan, M.5
Schaff, W.J.6
|