Selective growth of InP/InGaAs 〈0 1 0〉 ridges: Physical and optical characterization

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1069-1074

  Poole, P J ^a   Aers, G C ^a   Kam, A ^a   Dalacu, D ^a   Studenikin, S ^a   Williams, R L ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A3. Chemical beam epitaxy; A3. Selective epitaxy; B1. Phosphides; B3. Semiconducting III V materials

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

PHOSPHIDES; SELECTIVE EPITAXY; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 39649124682     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.062     Document Type: Article

References (22)

1. Wiel W.G.v.d., Stopa M., Kodera T., Hatano T., and Tarucha S. New J. Phys. 8 2 (2006) 28
2. Loss D., and DiVincenzo D.P. Phys. Rev. A 57 1 (1998) 120
3. Shields A.J. Nat. Photon. 1 4 (2007) 215
4. Heinecke H. J. Crystal Growth 136 1-4 (1994) 18
5. Finnie P., Charbonneau S., Buchanan M., Lacelle C., Fraser J., and Roth A.P. J. Appl. Phys. 82 10 (1997) 4883
6. Sugiura H., Nishida T., Iga R., Yamada T., and Tamamura T. J. Crystal Growth 121 4 (1992) 579
7. Fujikura H., Kihara M., and Hasegawa H. Thin Solid Films 336 1-2 (1998) 22
8. Pratt A.R., Williams R.L., Norman C.E., Fahy M.R., Marinopoulou A., and Chatenoud F. Appl. Phys. Lett. 65 8 (1994) 1009
9. Amano C., Rudra A., Grunberg P., Carlin J.F., and Ilegems M. J. Crystal Growth 164 1-4 (1996) 321
10. Hsieh T.-P., Chiu P.-C., Liu Y.-C., Yeh N.-T., Ho W.-J., and Chyi J.-I. J. Vac. Sci. Technol. B 23 1 (2005) 262
11. Lopez M., Ishikawa T., and Nomura Y. Jpn. J. Appl. Phys. Part 2 32 8A (1993) L1051
12. Zhang R., Tsui R., Shiralagi K., and Goronkin H. Jpn. J. Appl. Phys. Part 1 38 (1999) 455
13. Lefebvre J., Poole P.J., Fraser J., Aers G.C., Chithrani D., and Williams R.L. J. Crystal Growth 234 2-3 (2002) 391
14. Kayser O. J. Crystal Growth 107 1-4 (1991) 989
15. Gibbon M., Stagg J.P., Cureton C.G., Thrush E.J., Jones C.J., Mallard R.E., Pritchard R.E., Collis N., and Chew A. Semicond. Sci. Technol. 8 6 (1993) 998
16. Roth J.A., Chow D.H., Olson G.L., Brewer P.D., Williamson W.S., and Johs B. J. Crystal Growth 201 202 (1999) 31
17. Thibado P.M., Salamo G.J., and Baharav Y. J. Vac. Sci. Technol. B 17 1 (1999) 253
18. Bhat R., Koza M.A., Hwang D.M., Brasil M.J.S.P., Nahory R.E., and Oe K. J. Crystal Growth 124 1-4 (1992) 311
19. Mitsuhara M., Okamoto M., Iga R., Yamada T., and Sugiura H. J. Crystal Growth 136 1-4 (1994) 195
20. Couto J., Iikawa O.D.D.F., Rudolph J., Hey R., and Santos P.V. Phys. Rev. Lett. 98 3 (2007) 036603
21. Ohno Y., Terauchi R., Adachi T., Matsukura F., and Ohno H. Phys. Rev. Lett. 83 20 (1999) 4196
22. Elias P., Cambel V., Hasenohrl S., and Kostic I. J. Crystal Growth 233 1-2 (2001) 141