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Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4883-4888

Faceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy

(6) Finnie, P a,b Charbonneau, S a Buchanan, M a Lacelle, C a Fraser, J a Roth, A P a

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; EPITAXIAL GROWTH; HELIUM NEON LASERS; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION; DESORPTION; FIELD EMISSION; GALLIUM; SILICON COMPOUNDS;

BOMEM FOURIER TRANSFORM INFRARED INTERFEROMETERS; FIELD EMISSION SCANNING ELECTRON MICROSCOPE; SELECTIVE AREA CHEMICAL BEAM EPITAXY;

NANOSTRUCTURED MATERIALS; CHEMICAL BEAM EPITAXY;

CRYSTALLOGRAPHIC PLANE; DESORPTION RATE; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; GAINAS/INP; GROUP III; INP; INP SUBSTRATES; LATERAL GROWTH; LOW TEMPERATURE PHOTOLUMINESCENCE; ORTHOGONAL DIRECTIONS; PL SPECTRA; QUANTUM WELL; SELECTIVE AREAS; SEM MICROGRAPHS;

EID: 0031276348 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.366351 Document Type: Article

Times cited : (7)

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