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Volumn 336, Issue 1-2, 1998, Pages 22-25
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Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates
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Author keywords
Cathodoluminescence; InGaAs ridge quantum wire; Pattern geometry; Scanning electron microscopy; Selective molecule beam epitaxy; Uniformity
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Indexed keywords
CATHODOLUMINESCENCE;
MOLECULAR BEAM EPITAXY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
RIDGE QUANTUM WIRES;
SELECTIVE MOLECULAR BEAM EPITAXY (MBE);
SEMICONDUCTOR QUANTUM WIRES;
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EID: 0032309363
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01210-3 Document Type: Article |
Times cited : (2)
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References (14)
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