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Volumn 336, Issue 1-2, 1998, Pages 22-25

Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates

Author keywords

Cathodoluminescence; InGaAs ridge quantum wire; Pattern geometry; Scanning electron microscopy; Selective molecule beam epitaxy; Uniformity

Indexed keywords

CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

EID: 0032309363     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01210-3     Document Type: Article
Times cited : (2)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.