Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 4, 2008, Pages 828-832

  Zhuang, Huizhao ^a   Xue, Shoubin ^b   Zhang, Shiying ^a   Hu, Lijun ^a   Li, Baoli ^a   Xue, Chengshan ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

Ammoniating technique; Ga2O3 films; GaN nanorods

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; MAGNETRON SPUTTERING; NANORODS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

AMMONIATING TECHNIQUE; FIELD EMISSION TRANSMISSION ELECTRON MICROSCOPE; GROWTH MECHANISMS;

THIN FILMS;

EID: 38949160426     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.10.074     Document Type: Article

References (24)

1. Nakamura S. Science 281 (1998) 956
2. Morales A.M., and Lieber C.M. Science 279 (1998) 208
3. Tang C.C., Fan S.S., Dang H.Y., Li P., and Liu Y.M. Appl. Phys. Lett. 77 (2000) 1961
4. Chen C.-C., and Yeh C.-C. Adv. Mater. 12 (2000) 738
5. Han W.Q., Redlich P., Ernst F., and Ruhle M. Appl. Phys. Lett. 76 (2000) 652
6. Han W.Q., and Zett A. Appl. Phys. Lett. 80 (2002) 303
7. Duan X.F., and Lieber C.M. J. Am. Chem. Soc. 122 (2002) 188
8. Perlin P., Jauberthiecarillon C., Itie J.P., Miguel A.S., Grzegory I., and Polian A. Phys. Rev. B 45 (1992) 83
9. Xue S., Zhuang H., et al. Chin. Phys. Lett. 23 11 (2006) 3055
10. Sun Y., Miyasato T., and Wigmore J.K. Appl. Phys. 85 6 (1999) 3377
11. Meng G.W., Zhang L.D., Qin Y., Mo C.M., and Phillipp F. Nanostruct. Mater. 12 (1999) 1003
12. Bachari E.M., Aud G.B., Ben Amor S., et al. Thin Solid Films 348 1-2 (1999) 165
13. Hongdi X., Honglei M., Chengshan X., et al. Diamond Relat. Mater. 14 (2005) 1730
14. Zhou S.Q., Vantomme A., and Zhang B.S. Appl. Phys. Lett. 86 (2005) 081912
15. Ridley B.K. Quantum Process in Semiconductors (1982), Clarendon, Oxford, pp. 62-66
16. Monemar B. Phys. Rev. B 10 (1974) 676
17. Bae S.Y., Seo H.W., et al. Chem. Phys. Lett. 376 (2003) 445
18. Mao X., and Yang Z. Chin. J. Semicond. 20 8 (1999) 639
19. Sun Y., and Miyasato T. J. Appl. Phys. 84 11 (1998) 6451
20. Xiaolong C., Jianye L., Yingge C., et al. Adv. Mater. 12 19 (2000) 1432
21. Shi W.S., Zheng Y.F., et al. Chem. Phys. Lett. 345 (2001) 377
22. Peng H.Y., Zhou X.T., Wang N., et al. Chem. Phys. Lett. 327 (2000) 263
23. Xue S., Zhuang H., et al. EPJ-Appl. Phys. 36 (2006) 1
24. Xue S., and Zhuang H. J. Electron. Mater. 36 4 (2007) 502