Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Wang, R S ^a   Gu, Q L ^b   Ling, C C ^b   Ong, H C ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; ZINC OXIDE;

BAND-EDGE EMISSION; DEEP LEVEL DEFECTS;

CRYSTAL DEFECTS;

EID: 38849139218     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838326     Document Type: Article

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