Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Jellett, W E ^a   Weber, K J ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MOS DEVICES; PASSIVATION;

DIELECTRIC LAYERS; SEMICONDUCTOR SURFACES; SURFACE RECOMBINATION VELOCITY;

SILICON WAFERS;

EID: 33846603782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2434172     Document Type: Article

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