Bragg diffraction, synchrotron x-ray reflectance, and x-ray photoelectron spectroscopy studies of low temperature plasma oxidation of native SiO 2 on silicon on insulator

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 305-309

  Bhargava, M ^a   Donner, W ^b   Srivastava, A K ^c   Wolfe, J C ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b University of Houston   (United States)

^c AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITION; LAUE OSCILLATIONS; PLASMA SYSTEM; SYNCHROTRON BRAGG DIFFRACTION;

OXIDATION; SILICON WAFERS; SYNCHROTRON RADIATION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 38849132153     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2790927     Document Type: Article

References (18)

1. International Technology Roadmap for Semiconductors, 2005.
2. B. E. Deal and A. S. Grove, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1713945 36, 3770 (1965).
3. M. Bhargava, W. Donner, A. Srivastava, and J. C. Wolfe, AIP Conf. Proc. APCPCS 0094-243X 10.1063/1.2799369 931, 196 (2007).
4. A. Stierle, P. Boedeker, and H. Zabel, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(94)00830-2 327, 9 (1995).
5. O. H. Seeck, I. D. Kaendler, M. Tolan, K. Shin, M. H. Rafailovich, J. Sokolov, and R. Kolb, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126452 76, 2713 (2000).
6. P. F. Miceli, D. A. Neumann, and H. Zabel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.96749 48, 24 (1986).
7. J. Als-Nielsen and D. McMorrow, Elements of Modern X-ray Physics (Wiley, New York, 2001), Chap., p. 133.
8. E. N. Maslen, A. G. Fox, and M. A. O'Keefe, International Tables for X-ray Crystallography (Kluwer Academic, Dordrecht, 1992), Vol. C, p. 500.
9. J. A. Nelder and R. Mead, Comput. J. CMPJA6 0010-4620 7, 308 (1965).
10. K. Takahashi, H. Nohira, K. Hirose, and T. Hattoria, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1616204 83, 3422 (2003).
11. M. P. Seah, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.2020 37, 300 (2005).
12. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.38.6084 38, 6084 (1988).
13. M. P. Seah and S. J. Spencer, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.2070 37, 731 (2005).
14. M. P. Seah and S. J. Spencer, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1433 33, 640 (2002).
15. M. P. Seah and S. J. Spencer, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1565 35, 515 (2003).
16. L. G. Parratt, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.95.359 95, 359 (1954).
17. Z. H. Lu and J. P. McCaffrey, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.120438 71, 2764 (1997).
18. J. W. Mayer and S. S. Lau, Electronic Materials Science: For Integrated Circuits in Si and GaAs (Macmillan, New York, 1990), Chap., p. 252.