Structural and optical properties of GaN-based nanocrystalline thin films

Thin Solid Films

Volumn 516, Issue 7, 2008, Pages 1617-1621

  Grigorescu, C E A ^a   Tortet, L ^b   Monnereau, O ^b   Argeme, L ^b   Trodahl, H J ^c   Granville, S ^c   Bittar, A ^d   Budde, F ^c   Ruck, B J ^c   Williams, G V M ^d   Pavelescu, G ^a   Tonetto, A ^e   Notonier, R ^e   Logofatu, C ^f  

^a NATIONAL INSTITUTE OF RESEARCH AND DEVELOPMENT FOR OPTOELECTRONICS INOE 2000   (Romania)

^b AIX MARSEILLE UNIVERSITY   (France)

^c VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

^d CALLAGHAN INNOVATION   (New Zealand)

^e AIX MARSEILLE UNIVERSITY   (France)

^f National Institiute R and D Materials Physics   (Romania)

Author keywords

Annealing; Gallium nitride; Ion assisted deposition; Raman spectroscopy; Scanning electron microscopy; Short range order; X ray diffraction; X ray photoemission spectroscopy

Indexed keywords

ANNEALING; GALLIUM NITRIDE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ION ASSISTED DEPOSITION; SHORT RANGE ORDER;

NANOCRYSTALLINE MATERIALS;

EID: 38749086894     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.201     Document Type: Article

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