Properties of amorphous GaN grown on silicon

International Journal of Modern Physics B

Volumn 16, Issue 6-7, 2002, Pages 1086-1090

  Hassan, Z ^a   Ibrahim, K ^a   Kordesch, M E ^b   Halverson, W ^c   Colter, P C ^c  

^a SCHOOL OF PHYSICS   (Malaysia)

^b OHIO UNIVERSITY   (United States)

^c SPIRE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METAL DERIVATIVE; MINERAL; SAPPHIRE; SILICON; UNCLASSIFIED DRUG;

ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; COMPARATIVE STUDY; CONFERENCE PAPER; COST EFFECTIVENESS ANALYSIS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTROCHEMICAL ANALYSIS; ELECTRON CYCLOTRON RESONANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL ROTATION; PARTICLE SIZE; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION;

EID: 0037139074     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202010907     Document Type: Conference Paper

References (9)

1. GaN, AIN, and InN: A Review
2. Can amorphous GaN serve as a useful electronic material?
3. Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT
4. Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide
5. Low temperature ECR-plasma assisted MOCVD microcrystalline and amorphous GaN deposition and characterization for electronic devices
6. Infrared lattice vibrations and free electron dispersion in GaN