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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1282-1285

SEM and Raman studies of annealed nanocrystalline GaN and amorphous GaN:O

(9) Trodahl, H J a Grigorescu, C E A b Bittar, A c Budde, F a Ruck, B J a Granville, S a Williams, G V M c Monnereau, O d Notonier, R e

a VICTORIA UNIVERSITY OF WELLINGTON (New Zealand)

b INOE 2000 ^* (Romania)

c CALLAGHAN INNOVATION (New Zealand)

d AIX MARSEILLE UNIVERSITY (France)

e AIX MARSEILLE UNIVERSITY (France)

Author keywords

III V semiconductors; Luminescence; Raman spectroscopy; SEM; Short range order; Vapor phase deposition

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DEPOSITION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THIN FILMS;

ANNEALED A-GAN:O FILMS; III-V SEMICONDUCTORS; SHORT-RANGE ORDER; VAPOR PHASE DEPOSITION;

GALLIUM NITRIDE;

EID: 33744819147 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.11.106 Document Type: Article

Times cited : (2)

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