Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001) on α-Al2O3(0001)

Journal of Materials Research

Volumn 23, Issue 1, 2008, Pages 13-17

  Wang, Chong Min ^a   Saraf, L V ^a   Hubler, T L ^b   Nachimuthu, P ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); LATTICE MISMATCH; ZINC COMPOUNDS;

PERIODIC DISLOCATIONS; TILTED DOMAIN GROWTH;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 38649111017     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0026     Document Type: Article

References (23)

1. Z.Y. Fan and J.G. Lu: Zinc oxide nanostructures: Synthesis and properties. J. Nanosci. Nanotechnol. 5, 1561 (2005).
2. R. Triboulet and J. Perrière: Epitaxial growth of ZnO films. Prog. Crystal Growth Charact. Mater. 47, 65 (2003).
3. xO diluted magnetic semiconductors grown by oxygen plasma-assisted molecular beam epitaxy. Appl. Phys. Lett. 90, 052504 (2007).
4. M. Venkatesan, C.B. Fitzgerald, J.G. Lunney, and J.M.D. Coey: Anisotropic ferromagnetism in substituted zinc oxide. Phys. Rev. Lett. 93(17), 177206 (2004).
5. 2+:ZnO. Phys. Rev. Lett. 97, 037203 (2006).
6. Y.W. Heo, M.P. Ivill, K. Ip, D.P. Norton, S.J. Pearton, J.G. Kelly, R. Rairigh, A.F. Hebard, and T. Steiner: Effects of high-dose Mn implantation into ZnO grown on sapphire. Appl. Phys. Lett. 84, 2292 (2004).
7. D.C. Kundaliya, S.B. Ogale, S.E. Lofland, S. Dhar, C.J. Metting, S.R. Shinde, Z. Ma, B. Varughese, K.V. Ramanujachary, L. Salamanca-Riba, and T. Venkatesan: On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system. Nat. Mater. 3, 709 (2004).
8. M.C. Newton and P.A. Warburton: ZnO tetrapod nanocrystals. Mater. Today 10(5), 50 (2007).
9. Z.L. Wang and J. Song: Piezoelectric nanogenerators based on zinc oxide nanowire arrays. Science 312, 242 (2006).
10. C. Liu, S.H. Chang, T.W. Noh, M. Abouzaid, P. Ruterana, H.H. Lee, D.W. Kim, and J.S. Chung: Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrate. Appl. Phys. Lett. 90, 011906 (2007).
11. M. Ying, X. Du, Z. Mei, Z. Zeng, H. Zheng, Y. Wang, J. Jia, Z. Zhang, and Q. Xue: Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films. J. Phys. D 37, 3058 (2004).
12. 3 substrate. Superlattices Microstruct. 40, 501 (2006).
13. 3 heterostructures: Transmission electron microscopy and triple-axis x-ray diffractometry. J. Cryst. Growth 209, 537 (2000).
14. Y. Chen, S. Hong, H. Ko, V. Krishner, H. Wenisch, T. Yao, K. Inaba, and Y. Segawa: Effects of an extremely thin buffer on heteroepitaxy with large lattice mismatch. Appl. Phys. Lett. 78, 3352 (2001).
15. Z. Fu, B. Lin, G. Liao, and Z. Wit: The effect of Zn buffer layer on growth and luminescence of ZnO films deposited on Si substrates. J. Cryst. Growth 193, 316 (1998).
16. R.D. Vispute, V. Talyansky, S. Choopun, R.P. Sharma, T. Venkatesan, M. He, X. Tang, J.B. Halpen, M.G. Spencer, Y.X. Li, L.G. Salamanca-Riba, A.A. Iliadis, and K.A. Jones: Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices. Appl. Phys. Lett. 73, 348 (1998).
17. 2O3 substrate. Superlattices Microstruct. 40, 501 (2006).
18. M. Abouzaid, P. Tailpied, P. Ruterana, C. Liu, B. Xiao, S-J. Cho, Y-T. Moon, and H. Morkoç: A TEM study of ZnO layers deposited by MBE and RF magnetron sputtering. Superlattices Microstruct. 39, 387 (2006).
19. Y. Yoshino, K. Inoue, M. Takeuchi, and K. Ohwada: Effects of interface microstructure in crystallization of ZnO thin films prepared by radio frequency sputtering. Vacuum 51(4), 601 (1998).
20. 3 heterostructures. J. Appl. Phys. 84(5), 2597 (1998).
21. X.L. Du, M. Murakami, H. Iwaki, and A. Yoshikawa: Complete elimination of multi-angle rotation domains in ZnO epilayers grown on (0001) sapphire substrate. Phys. Status Solidi A 192, 183 (2002).
22. X.L. Du, M. Murakami, H. Iwaki, Y. Ishitani, and A. Yoshikawa: Effects of sapphire (0001) surface modification by gallium pre-exposure on the growth of high-quality epitaxial ZnO film. Jpn. J. Appl. Phys. 41, L1043 (2002).
23. R. Kilaas: MacTempasX. Total Resolution LLC, Berkeley, CA. Available at: http://www.totalresolution.com.