Silicon layer transfer by hydrogen implantation combined with wafer bonding in ultrahigh vacuum

Applied Physics Letters

Volumn 89, Issue 19, 2006, Pages

  Fecioru, Alin Mihai ^a   Senz, Stephan ^a   Scholz, Roland ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; HYDROGEN; INTERFACES (MATERIALS); ION IMPLANTATION; SILICON WAFERS; SUBSTRATES; ULTRAHIGH VACUUM;

HYDROGEN IMPLANTATION; PHOTOTHERMAL ACTIVATION; SILICON LAYER TRANSFER; ULTRAHIGH VACUUM BONDING;

ELECTRON TRANSITIONS;

EID: 33750918723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387410     Document Type: Article

References (13)

1. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
2. Q. Y. Tong, E. Schmidt, U. Gösele, and M. Reiche, Appl. Phys. Lett. 64, 625 (1994).
3. H. Moriceau, F. Fournel, B. Aspar, B. Bataillou, A. Beaumont, C. Morales, A. M. Cartier, S. Pocas, C. Lagahe, E. Jalaguier, A. Soubie, B. Biasse, N. Sousbie, S. Sartori, J. F. Michaud, F. Letertre, O. Rayssac, I. Cayrefourcq, C. Richtarch, N. Daval, C. Aulnette, T. Akatsu, B. Osternaud, B. Ghyselen, and C. Mazure, J. Electron. Mater. 32, 829 (2003).
4. U. Gösele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, and K. Scheerschmidt, Appl. Phys. Lett. 67, 3614 (1995).
5. S. K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd edition (Wiley, New York, 1994), pp. 369-407.
6. D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, and D. C. Jacobson, Phys. Rev. Lett. 70, 1643 (1993).
7. L. Huang, Ph.D. Thesis, Duke University, 1999.
8. M. Schluter and M. L. Cohen, Phys. Rev. B 17, 716 (1978).
9. T. C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, P. Avouris, and R. E. Walkup, Science 268, 1590 (1995).
10. A. Pusel, U. Wetterauer, and P. Hess, Phys. Rev. Lett. 81, 645 (1998).
11. G. G. Bentini, M. Bianconi, and C. Summonte, Appl. Phys. A: Solids Surf. 45, 317 (1988).
12. N. Sato and T. Yonehara, Appl. Phys. Lett. 65, 1924 (1994).
13. A. Cuevas, P. A. Basore, G. Giroult-Matlakowski, and C. Dubois, J. Appl. Phys. 80, 3370 (1996).