Growth and characterization of in2O3 thin films prepared by pulsed laser deposition

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 7, 2007, Pages 2211-2216

  Gupta, R K ^a   Mamidi, N ^a   Ghosh, K ^a   Mishra, S R ^b   Kahol, P K ^a  

^a MISSOURI STATE UNIVERSITY   (United States)

^b University of Memphis   (United States)

Author keywords

Hall effect; Indium oxide; Mobility; Pulsed laser deposition; Transparent electrode

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC NETWORK PARAMETERS; GROWTH TEMPERATURE; HALL EFFECT; HALL MOBILITY; HOLE MOBILITY; INDIUM COMPOUNDS; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; PARTIAL PRESSURE; PULSED LASER DEPOSITION; PULSED LASERS; TIN OXIDES; TRANSPARENT ELECTRODES;

ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PARAMETER; IN2O3 THIN FILMS; INDIUM OXIDE; OPTIMUM GROWTH TEMPERATURE; OPTOELECTRONIC APPLICATIONS; OXYGEN PARTIAL PRESSURE; TIN DOPED INDIUM OXIDE;

THIN FILMS;

EID: 38549130889     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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