Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800°C

Solid-State Electronics

Volumn 45, Issue 7, 2001, Pages 1127-1135

  Bhat, V K ^a   Bhat, K N ^a   Subrahmanyam, A ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; MOS DEVICES; POSITIVE IONS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMOOXIDATION; TUNNEL DIODES; ULTRATHIN FILMS; VAPOR PRESSURE;

ULTRATHIN OXIDES; WET OXIDATION PROCESSES;

SILICA;

EID: 0035390617     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00136-8     Document Type: Article

References (24)

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15. 2
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19. 2
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