Influence of the deformation on the luminescence properties of Si light-emitting diodes

Physica Status Solidi C: Conferences

Volumn 2, Issue 6, 2005, Pages 1842-1846

  Sobolev, N A ^a   Emelyanov, A M ^a   Shek, E I ^a   Feklisova, O V ^b   Yakimov, E B ^b   Kotereva, T V ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c INSTITUTE OF CHEMISTRY OF HIGH PURITY SUBSTANCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BENDING (DEFORMATION); CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ION IMPLANTATION; LIGHT EMITTING DIODES; SEMICONDUCTING SILICON; SUBSTRATES;

EXTENDED DEFECTS; GAUSSIAN LINES; LINE INTENSITY; WAVELENGTH RANGES;

ELECTROLUMINESCENCE;

EID: 26044469061     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460514     Document Type: Conference Paper

References (4)

1. N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, and V.I. Vdovin, Phys. Solid State 46, 35 (2004).
2. N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, and V.I. Vdovin, Physica B 340-432, 1031 (2003).
3. M. Acciari, S. Binetti, O.V. Feklisova, E.A. Steinman, and E.B. Yakimov, Solid State Phenom. 95-96, 453 (2004).
4. S. Pizzini, E. Leonti, S. Binetti, M. Acciarri, A. Le Donne, and B. Pichaud, Solid State Phenom. 95-96, 273 (2004).