Properties of Si:Cr annealed under enhanced stress conditions

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 375-380

  Misiuk, Andrzej ^a   Barcz, Adam ^a   Chow, Lee ^b   Surma, Barbara ^a   Bak Misiuk, Jadwiga ^c   Prujszczyk, Marek ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Annealing; Chromium; Czochralski silicon; High pressure; Implantation; Magnetic ordering; SPER; Structure

Indexed keywords

EPITAXIAL FILMS; HYDROSTATIC PRESSURE; MAGNETIZATION; PHOTOLUMINESCENCE; STRESS RELAXATION; SURFACE DIFFUSION; ANNEALING; CHROMIUM; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; STRUCTURE (COMPOSITION);

CZOCHRALSKI SILICON; EPITAXIAL REGROWTH; HYDROSTATIC ARGON PRESSURE; SAMPLE SURFACES; AMORPHOUS SILICON (A-SI); ARGON PRESSURE; CR CONCENTRATION; HIGH PRESSURE; SOLID PHASE EPITAXIAL; SPER; STRESS CONDITION;

SEMICONDUCTING SILICON; AMORPHOUS SILICON;

EID: 38549086882     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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