Structure and magnetic properties of Si:Mn annealed under enhanced hydrostatic pressure

Journal of Alloys and Compounds

Volumn 423, Issue 1-2 SPEC. ISS., 2006, Pages 201-204

  Misiuk, A ^a   Bak Misiuk, J ^b   Surma, B ^a   Osinniy, W ^b   Szot, M ^b   Story, T ^b   Jagielski, J ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

Amorphisation; High pressure; Impurities in semiconductors; Magnetic measurements; Semiconductors

Indexed keywords

AMORPHIZATION; HIGH PRESSURE EFFECTS; HYDROSTATIC PRESSURE; IMPURITIES; MAGNETIC PROPERTIES; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

CURIE TEMPERATURE; FLOATING ZONES; IMPURITIES IN SEMICONDUCTORS; TEMPERATURE-DEPENDENT MAGNETIZATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33748707583     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2005.12.103     Document Type: Article

References (9)

1. Edmonds K.W., Wang K.Y., Campion R.P., Neumann A.C., Farley N.R.S., Gallagher B.L., and Foxon C.T. Appl. Phys. Lett. 81 (2002) 4991
2. Park Y.D., Hanbicki A.T., Erwin S.C., Hellberg C.S., Sullivan J.M., Mattson J., Ambrose T.F., Wilson A., Spanos G., and Jonker B.T. Science 295 (2002) 651
3. Nakayama H., Ohta H., and Kulatov E. Physica B 302-303 (2001) 419
4. Bolduc M., Awo-Affouda C., Stollenwerk A., Huang M.B., Ramos F.G., Agnello G., and LaBella V.P. Phys. Rev. B 71 (2005) 033302
5. Misiuk A., Surma B., and Bak-Misiuk J. Solid State Phen. 108-109 (2005) 351
6. Corbett J.W., Karins J.P., and Tan T.Y. Nucl. Instrum. Methods 182-183 (1981) 457
7. Estreicher S.K., Weber J., Derecskei-Kovacs A., and Marynick D.S. Phys. Rev. B 63 (1997) 5037
8. Keynon A.J., Steinman E.A., Pitt C.W., Hole D.E., and Vdovin V.I. J. Phys. Condens. Matter. 15 (2003) S2843
9. Davies G. Phys. Rep. 176 (1989) 83