Effect of pressure annealing on structure of Si:Mn

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 270-274

  Misiuk, A ^a   Surma, B ^a   Bak Misiuk, J ^b   Barcz, A ^a   Jung, W ^a   Osinniy, W ^b   Shalimov, A ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

Hydrostatic pressure; Magnetic ordering; Si:Mn; Thermal donor

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HYDROSTATIC PRESSURE; MAGNETIC PROPERTIES; MAGNETIZATION; MANGANESE COMPOUNDS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY;

MAGNETIC METHODS; SI:MN; THERMAL DONOR; THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 33744544671     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.048     Document Type: Article

References (6)

1. Bolduc M, Awo-Affouda C, Stollenwerk A, Huang MB, Ramos GG, Agnello G, et al. Above room temperature ferromagnetism in Mn-ion implanted Si. Phys Rev B 2005;71:033302-1-3.
2. Misiuk A, Bak-Misiuk J, Surma B, Osinniy W, Szot M, Story T, et al. Structure and magnetic ordering of Si:Mn annealed under enhanced hydrostatic pressure. J. Alloys and Compounds, accepted for publication.
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