Comparison of different metal additives to SI for the homoepitaxial growth of 4H-SiC layers by vapour-liquid-solid mechanism

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 245-248

  Abdou, F ^a   Jacquier, C ^a   Ferro, G ^a   Cauwet, F ^a   Monteil, Y ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

Homoepitaxy; Low temperature; Metal Si melt; VLS

Indexed keywords

APPROXIMATION THEORY; COOLING; EPITAXIAL GROWTH; EVAPORATION; HYDROGEN; PROBLEM SOLVING;

HOMOEPITAXY; LOW TEMPERATURE; METAL-SI MELT; VAPOR-LIQUID-SOLID (VLS);

SILICON CARBIDE;

EID: 8744229114     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (5)

1. C. Jacquier, G. Ferro, F. Cauwet, J.C. Viala, G. Younes and Y. Monteil, J. Crystal Growth, 254, (2003), p 123
2. G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil Mat. Se. Forum, Vol. 389-393, (2002), p 287
3. C. Jacquier; G. Ferro, F. Cauwet, D. Chaussende, Y. Monteil, Crystal Growth & Design 3(3) (2003) p.285
4. C. Jacquier, G. Ferro, C. Balloud, M. Zilienski, J. Camassel, E. Polychroniadis; Y. Stoemenos, Y. Monteil, Poster WeP1-4 presented at this conference "Growth and characterisation of heavily Al doped 4H-SiC layers grown by VLS in Al-Si melts"
5. C. Colin, Thesis, Université Claude Bernard Lyon1 (1993).