Electrical characterisation of heavily al doped 4H-SiC layer grown by vapour-liquid-solid epitaxy in Al-Si melt

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 421-424

  Godignon, P ^a   Jacquier, C ^b   Blanque, S ^a,c   Montserrat, J ^a   Ferro, G ^b   Contreras, S ^c   Zielinski, M ^c   Monteil, Y ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Hall measurements; P type doping; VLS; Zener diodes

Indexed keywords

ALUMINUM; EPITAXIAL GROWTH; HALL MOBILITY; METALLIZING;

HALL MEASUREMENTS; VAPOUR-LIQUID-SOLID (VLS) MECHANISM;

SILICON CARBIDE;

EID: 34547856544     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.421     Document Type: Conference Paper

References (3)

1. C. Jacquier, G. Ferro, C. Balloud, M. Zielinski, J. Camassel, E.K. Polychroniadis; J. Stoemenos, F. Cauwet and Y. Monteil, Mater. Sci. Forum Vol. 457-460 (2004), p. 735-738
2. C. Jacquier, G. Ferro, F. Cauwet, D. Chaussende, Y. Monteil, Crystal Growth & Design 3(3) (2003) 285-287
3. P. Godignon, X. Jordá, R. Nipoti, G. Cardinali, N. Mestres, Mater. Sci. Forum, Vol. 389-393 (2002), pp. 1317-1320.