Formation and characterization of 3C-SiC by carbon-ion implantation into silicon with a MEVVA ion source

Surface Review and Letters

Volumn 14, Issue 6, 2007, Pages 1103-1106

  Wan, Y Z ^a   Xiong, G Y ^b   Song, F ^c   Luo, H L ^a   Huang, Y ^a   He, F ^a   Guo, L B ^a   Wang, Y L ^a  

^a TIANJIN UNIVERSITY   (China)

^b EAST CHINA JIAOTONG UNIVERSITY   (China)

^c NANKAI UNIVERSITY   (China)

Author keywords

3C SiC; Carbon; Ion implantation; Morphology

Indexed keywords

CARBON; ION IMPLANTATION; ION SOURCES; MORPHOLOGY;

CARBON-ION IMPLANTATION; CRYSTALLINE CUBIC SILICON CARBIDE (3C-SIC); MEVVA ION SOURCE; SURFACE LAYERS;

SILICON CARBIDE;

EID: 38449098394     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X07010573     Document Type: Article

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