|
Volumn 449, Issue 1-2, 2004, Pages 73-79
|
Formation of a surface SiC layer by carbon-ion implantation into silicon
|
Author keywords
Ellipsometry; Infra red reflectance; Ion implantation; Silicon carbide
|
Indexed keywords
ANNEALING;
AUGER ELECTRON SPECTROSCOPY;
CHEMICAL VAPOR DEPOSITION;
ELLIPSOMETRY;
HIGH TEMPERATURE EFFECTS;
ION BEAMS;
ION BOMBARDMENT;
ION IMPLANTATION;
LIGHT REFLECTION;
RAMAN SPECTROSCOPY;
SPUTTERING;
SUBSTRATES;
SURFACE PHENOMENA;
SYNTHESIS (CHEMICAL);
INFRE-RED REFLECTANCE;
ION IMPLANTERS;
SILICON CARBIDE;
|
EID: 1042292767
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2003.10.018 Document Type: Article |
Times cited : (23)
|
References (17)
|