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Volumn 449, Issue 1-2, 2004, Pages 73-79

Formation of a surface SiC layer by carbon-ion implantation into silicon

Author keywords

Ellipsometry; Infra red reflectance; Ion implantation; Silicon carbide

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; HIGH TEMPERATURE EFFECTS; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; LIGHT REFLECTION; RAMAN SPECTROSCOPY; SPUTTERING; SUBSTRATES; SURFACE PHENOMENA; SYNTHESIS (CHEMICAL);

EID: 1042292767     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.018     Document Type: Article
Times cited : (23)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.