Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis

Solid State Communications

Volumn 128, Issue 11, 2003, Pages 435-439

  Chen, Dihu ^a,b,c   Wong, S P ^b   Cheung, W Y ^b   Xu, J B ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

A. Nanostructure; B. Nanofabrication; D. Phase transitions; E. Electron emission spectroscopies

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ION IMPLANTATION; MORPHOLOGY; SURFACES; X RAY SPECTROSCOPY;

ION BEAM SYNTHESIS;

HETEROJUNCTIONS;

EID: 0142063032     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.07.006     Document Type: Article

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