High-voltage (3 kV) UMOSFETS in 4H-SiC

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 972-975

  Li, Y ^b,c   Cooper Jr , J A ^a,b   Capano, M A ^b  

^a IEEE

^b PURDUE UNIVERSITY   (United States)

^c ADVANCED MICRO DEVICES   (United States)

Author keywords

Edge termination; JTE; MOSFET; Power devices; Silicon carbide; Trench; UMOSFET

Indexed keywords

ELECTRIC POTENTIAL; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

EDGE TERMINATION;

MOSFET DEVICES;

EID: 0036610081     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003714     Document Type: Article

References (9)

1. High-voltage double-implanted MOS power MOSFETs transistors in 6H-SiC
2. SiC integrated MOSFETs
3. High-voltage accumulation-layer UMOSFETs in 4H-SiC
4. An 1800 V triple implanted vertical 6H-SiC MOSFET
5. 4.5 kV novel high voltage high performance SiC-FET 'SIAFET'
6. Junction termination extension (JTE), a new technique for increasing avalanche breakdown voltage and controlling surface electric fields in p-n junctions
7. Ionization rates and critical fields in 4H SiC
8. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC