Current-induced nanochemistry: Local oxidation of thin metal films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1451-1456

  Martel, R ^a   Schmidt, T ^a   Sandstrom, R L ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3843149539     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581835     Document Type: Article

References (34)

1. See, for example, Atomic and Nanometer-Scale Modification of Materials: Fundamentals and Applications, edited by Ph. Avouris (Kluwer Academic, Dordrecht, The Netherlands, 1993).
2. See special issue on Nanometer-Scale Science and Technology, Proc. IEEE 85 (1997).
3. Single-Charge Tunneling-Coulomb Blockade Phenomena in Nanostructures, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992).
4. R. C. Ashoori, Nature (London) 379, 413 (1996).
5. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian, and S. J. Harris, Appl. Phys. Lett. 68, 35 (1996).
6. L. Guo, E. Leobandung, and S. Y. Chou, Science 275, 649 (1997).
7. D. C. Ralph, C. T. Black, and M. Tinkham, Phys. Rev. Lett. 78, 4087 (1997).
8. J. A. Dagata, Science 270, 1625 (1995), and references therein.
9. E. S. Snow and P. M. Campbell, Science 270, 1639 (1995).
10. Ph. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett. 71, 285 (1997); Ph. Avouris, R. Martel, T. Hertel, and R. L. Sandstrom, Appl. Phys. A: Mater. Sci. Process. 66, S667 (1998).
11. Ph. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett. 71, 285 (1997); Ph. Avouris, R. Martel, T. Hertel, and R. L. Sandstrom, Appl. Phys. A: Mater. Sci. Process. 66, S667 (1998).
12. 2 involves a volume expansion by a factor of 1.6.
13. See. for example, S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
14. K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S. Ichimura, and A. Ando, Jpn. J. Appl. Phys., Part 1 34, 1387 (1995); E. S. Snow, P. M. Campbell, and D. Park, Superlattices Microstruct. 20, 545 (1996); B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus, Appl. Phys. Lett. 71, 1733 (1997).
15. K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S. Ichimura, and A. Ando, Jpn. J. Appl. Phys., Part 1 34, 1387 (1995); E. S. Snow, P. M. Campbell, and D. Park, Superlattices Microstruct. 20, 545 (1996); B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus, Appl. Phys. Lett. 71, 1733 (1997).
16. K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S. Ichimura, and A. Ando, Jpn. J. Appl. Phys., Part 1 34, 1387 (1995); E. S. Snow, P. M. Campbell, and D. Park, Superlattices Microstruct. 20, 545 (1996); B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus, Appl. Phys. Lett. 71, 1733 (1997).
17. For a review see, for example, Electromigration and Electronic Device Degradation, edited by A. Christou (Wiley, New York, 1994).
18. R. S. Sorbello, Mater. Res. Soc. Symp. Proc. 427, 73 (1996); R. E. Walkup, D. M. Newns, and Ph. Avouris, Phys. Rev. B 48, 1858 (1993).
19. R. S. Sorbello, Mater. Res. Soc. Symp. Proc. 427, 73 (1996); R. E. Walkup, D. M. Newns, and Ph. Avouris, Phys. Rev. B 48, 1858 (1993).
20. x. It also exceeds the value of 0.14 eV that we measured for our AFM-tip-induced oxide.
21. R. Landauer, J. Phys.: Condens. Matter 1, 8099 (1989); see also the review by C. W. J. Beenakker and H. van Houten, Solid State Phys. 44, 1 (1991).
22. R. Landauer, J. Phys.: Condens. Matter 1, 8099 (1989); see also the review by C. W. J. Beenakker and H. van Houten, Solid State Phys. 44, 1 (1991).
23. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992); L. Olesen, E. Læsgaard, I. Stensgaard, F. Besenbacher, J. Schiotz, K. W. Jacobsen, and J. K. Nørskov, ibid. 72, 2251 (1994); J. I. Pascual et al., Science 267, 1793 (1995); J. M. Krans, J. M. van Ruitenbeek, V. V. Fisur, I. K. Yanson, and L. J. de Jongh, Nature (London) 375, 767 (1995); N. Agrait, G. Rubio, and S. Vieira, Phys. Rev. Lett. 74, 3995 (1995); E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996); E. Scheer, P. Joyez, D. Estere, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 78, 3535 (1997).
24. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992); L. Olesen, E. Læsgaard, I. Stensgaard, F. Besenbacher, J. Schiotz, K. W. Jacobsen, and J. K. Nørskov, ibid. 72, 2251 (1994); J. I. Pascual et al., Science 267, 1793 (1995); J. M. Krans, J. M. van Ruitenbeek, V. V. Fisur, I. K. Yanson, and L. J. de Jongh, Nature (London) 375, 767 (1995); N. Agrait, G. Rubio, and S. Vieira, Phys. Rev. Lett. 74, 3995 (1995); E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996); E. Scheer, P. Joyez, D. Estere, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 78, 3535 (1997).
25. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992); L. Olesen, E. Læsgaard, I. Stensgaard, F. Besenbacher, J. Schiotz, K. W. Jacobsen, and J. K. Nørskov, ibid. 72, 2251 (1994); J. I. Pascual et al., Science 267, 1793 (1995); J. M. Krans, J. M. van Ruitenbeek, V. V. Fisur, I. K. Yanson, and L. J. de Jongh, Nature (London) 375, 767 (1995); N. Agrait, G. Rubio, and S. Vieira, Phys. Rev. Lett. 74, 3995 (1995); E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996); E. Scheer, P. Joyez, D. Estere, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 78, 3535 (1997).
26. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992); L. Olesen, E. Læsgaard, I. Stensgaard, F. Besenbacher, J. Schiotz, K. W. Jacobsen, and J. K. Nørskov, ibid. 72, 2251 (1994); J. I. Pascual et al., Science 267, 1793 (1995); J. M. Krans, J. M. van Ruitenbeek, V. V. Fisur, I. K. Yanson, and L. J. de Jongh, Nature (London) 375, 767 (1995); N. Agrait, G. Rubio, and S. Vieira, Phys. Rev. Lett. 74, 3995 (1995); E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996); E. Scheer, P. Joyez, D. Estere, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 78, 3535 (1997).
27. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992); L. Olesen, E. Læsgaard, I. Stensgaard, F. Besenbacher, J. Schiotz, K. W. Jacobsen, and J. K. Nørskov, ibid. 72, 2251 (1994); J. I. Pascual et al., Science 267, 1793 (1995); J. M. Krans, J. M. van Ruitenbeek, V. V. Fisur, I. K. Yanson, and L. J. de Jongh, Nature (London) 375, 767 (1995); N. Agrait, G. Rubio, and S. Vieira, Phys. Rev. Lett. 74, 3995 (1995); E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996); E. Scheer, P. Joyez, D. Estere, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 78, 3535 (1997).
28. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992); L. Olesen, E. Læsgaard, I. Stensgaard, F. Besenbacher, J. Schiotz, K. W. Jacobsen, and J. K. Nørskov, ibid. 72, 2251 (1994); J. I. Pascual et al., Science 267, 1793 (1995); J. M. Krans, J. M. van Ruitenbeek, V. V. Fisur, I. K. Yanson, and L. J. de Jongh, Nature (London) 375, 767 (1995); N. Agrait, G. Rubio, and S. Vieira, Phys. Rev. Lett. 74, 3995 (1995); E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996); E. Scheer, P. Joyez, D. Estere, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 78, 3535 (1997).
29. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Phys. Rev. Lett. 69, 140 (1992); L. Olesen, E. Læsgaard, I. Stensgaard, F. Besenbacher, J. Schiotz, K. W. Jacobsen, and J. K. Nørskov, ibid. 72, 2251 (1994); J. I. Pascual et al., Science 267, 1793 (1995); J. M. Krans, J. M. van Ruitenbeek, V. V. Fisur, I. K. Yanson, and L. J. de Jongh, Nature (London) 375, 767 (1995); N. Agrait, G. Rubio, and S. Vieira, Phys. Rev. Lett. 74, 3995 (1995); E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996); E. Scheer, P. Joyez, D. Estere, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 78, 3535 (1997).
30. See, for example, Nanowires, edited by P. A. Serena and N. Garcia (Kluwer Academic, Dordrecht, The Netherlands, 1997).
31. M. Brandbyge and K. W. Jacobsen, in Ref. 19, p. 61.
32. L. I. Glazman and A. V. Khaetskii, Europhys. Lett. 9, 263 (1989); H. Yasuda and A. Sakai, Phys. Rev. B 56, 1069 (1997).
33. L. I. Glazman and A. V. Khaetskii, Europhys. Lett. 9, 263 (1989); H. Yasuda and A. Sakai, Phys. Rev. B 56, 1069 (1997).
34. The Si substrate underneath the Ti sheet as well as the Ti region decoupled from the island in the final AFM oxidation step can be used as gate electrodes.