Influence of resin properties to resist performance at ArF lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 583-590

  Yoon, Sangwoong ^a   Kim, Myungsun ^a   Lee, Hong ^a   Kim, Do Young ^a   Kim, Young Hoon ^a   Kim, Boo Deuk ^a   Kim, Jae Hyun ^a   Kim, Kyung Mee ^a   Lee, Shi Yong ^a   Kim, Young Ho ^a   Chon, Sang Mun ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

ArF Photoresist; LER; Molecular Weight; Pattern Profile; Polydispersity; Resin Properties

Indexed keywords

ARGON; MOLECULAR WEIGHT; MONOMERS; PARAMETER ESTIMATION; RESINS;

MOLECULAR SIZE FRACTION; PATTERN PROFILES; POLYDISPERSITY; RESIN PROPERTIES;

PHOTORESISTS;

EID: 3843130603     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533950     Document Type: Conference Paper

References (8)

1. H. Ito, "Chemically amplified resists: past, present, and future", Proc. SPIE Advances in Resist Technology and Processing XVI, 3678, 2. 1999.
2. U. Okoroanyanwu, J. D. Byers, T. Cao, S. E. Webber, C. G. Willson, "Monitoring photoacid generation in chemically amplified resist systems:, Publication Proc. SPIE Advances in Resist Technology and Processing XVI, 3333, 747, 1998.
3. C. G. Wilson, "Organic Resist Mateials", Introducion to Microlithgraphy, 2nd Ed., L. F. Thompson, C. G. Wilson, M. J. Bowden, 139-268, ACS, Washington, DC, 1994.
4. H. Mochizuki, H. Tomiyasu, Y. Kameyama, M. Tsukamoto, T. Niinomi, Y. Tanaka, J. Fujita, T. Ochiai, "High-performance profiles and characteristics of chemically amplified resist", ibid, 953, 1998
5. S. L. Ablaza, J. F. Cameron, G. Xu, and W. Yueh, "The effect of photoacid generator structure on deep ultraviolet resist performance", J. Vac. Sci. Technol. B 18, 2543, 2000
6. G. G. Barclay, C. J. Hawker, H. Ito, A. J. Orellana, P. R. Malenfant, R. F. Sinta, "Narrow polydispersity polymers for microlithography: synthesis and properties", Proc. SPIE Advances in Resist Technology and Processing XV, 2724, 249, 1996.
7. T. Azuma, K. Chiba, M. Imabeppu, D. Kawamura, Y. Onishi, "Line-edge roughness of chemically amplified resists" Proc. SPIE Advances in Resist Technology and Processing XVI, 3999, 264. 2000.
8. T. Itani, H. Yoshino, M. Takizawa, M. Yamana, H.i Tanabe, K. Kasama, "Effects of polymer structure on dissolution characteristics in chemically amplified 193-nm resists", Proc. SPIE Advances in Resist Technology and Processing XVI, 3678, 306. 1999.