Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 1, 2004, Pages 289-299

  Sugawara, Minoru ^a   Hashimoto, Takeo ^a   Nishiyama, Iwao ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Mask pattern correction; Off axis incident light; Pattern fidelity; Printability

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; LIGHT EXTINCTION; LIGHT REFLECTION; MASKS; PRINTING; ULTRAVIOLET RADIATION;

MASK PATTERN CORRECTION; OFF-AXIS INCIDENT LIGHT; OPTICAL PROXIMITY EFFECTS (OPE); PATTERN FIDELITY;

PHOTOLITHOGRAPHY;

EID: 3843103568     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534981     Document Type: Conference Paper

References (9)

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